Ferroelectric Hafnia: A New Age for FRAM has Started

FRAM technology development has seen a significant revival over the last decade due to the discovery of ferroelectricity in hafnia $(\text{HfO}_{2})$. The field has progressed in various areas and advancements for embedded FRAM, standalone DRAM-type FRAM as well as for stacked FRAM using multiple ferroelectric capacitors is described. Furthermore, opportunities for ferroelectric memory technology to surpass DRAM memory densities in the future are discussed. Finally, since any memory technology should operate below 1 V to be compatible to advanced process nodes, latest achievements for reducing coercive voltages in hafnia are summarized.