High Resistance and Low Variation 8Kb SOT-MRAM Compute-in-Memory Array Based on 1T-1R Cell Structure

Nonvolatile memories (NVMs) have emerged as promising candidates for efficient analog compute-in-memory (CIM). However, high power consumption and large variations in NVMs are key factors hindering the performance of analog computing. In this work, we demonstrated an 8Kb 1T-1R CIM macro-array utilizing spin-orbit torque (SOT) magnetic random-access memory (MRAM). The SOT-MRAM features high cell resistance at parallel magnetization configuration (Rp) of 2MΩ and low resistance standard variation-to-average ratio of 4.2% The CIM array achieves 10ns write speed and no endurance failures up to 10¹⁰ write cycles. Moreover, the linear analog multiply-accumulate (MAC) output maintains a sufficiently high accuracy, making it well-suited for binary neural network (BNN) applications in edge devices.