TEM Analysis on Nano Defects of Chip Bonding Component Materials

In the recent years, with the continuous prosperous development, the improvement of integration degree, the complexity of semiconductor chips and the gradual reduced size to the nanoscale of the third-generation semiconductor materials, the requirements for the reliability will also improve, followed by the advances in the failure analysis of chips and structural analysis of more micro materials. On this account, in the field of high-order compound semiconductor chips, it is of vital importance to find the locations of failure points and further analyze the causes for failure. In this research, a new positioning method is developed. Using the combination of known diffraction theory and shooting of planar defect samples, as well as the principle that the bright field images own the maximum image intensity under the double beam diffraction condition, the defect analysis is conducted on the chip planar structure. The detailed morphology of planar structural defects can be visually and clearly observed in TEM, and the cross-sectional samples are further prepared after matching with the following specific positioning of nano defects, further identifying the overall trend and defect source locations of the defects, improving the techniques for common defect analysis and the multi-directional defect trend analysis.