Improving the ZrO2/re-grown AlGaN interfaces by insulator Post Deposition Anealing for MIS-HEMTs Applications

We studied the effect of post deposition annealing (PDA) of ZrO2 gate insulator on the performance of gallium nitride-based metal-insulator-semiconductor (MIS) structures employing ZrO2/re-grown AlGaN interfaces. Compared with the control MIS-capacitor that have not undergone PDA, the PDA-processed MIS-capacitor exhibited more positive threshold voltage and highly pronounced spill-over, suggesting better quality of ZrO2/re-grown AlGaN interfaces. Corresponding PDA-processed MIS-high-electron-mobility transistors exhibited improved subthreshold swing and hysteretic behavior of the transfer curves over those of control transistor devices, corroborating the results obtained from MIS-capacitors.