InₓGa₁₋ₓAs Stacked Multichannel MOSFET Design to Improve the Electrostatic Performance by Self-Heating Effect Reduction

In this article, we propose InxGa1−xAs gate-all-around (GAA) MOSFET where In0.53Ga0.47As is used as channel. These devices excel in their ability to precisely modulate the electric field across the channel region, offering unparalleled control over charge carrier flow, while simultaneously exhibiting remarkable immunity to short-channel effects. To further improve device performance, a novel multi-channel architecture has been introduced, featuring 12 intricately arranged and isolated channels. This innovative design has yielded significant improvements in the device’s on-current characteristics, enabling higher-speed and enhanced overall functionality. However, it’s imperative to address the thermal challenges associated with the choice of In0.53Ga0.47As as the channel material. The inherent properties of this compound introduce self-heating effects, which can adversely impact device reliability and efficiency, particularly under high-power operating conditions. Effectively mitigating these thermal concerns through advanced thermal management techniques and material optimization strategies, an unique heat sink is designed for self-heating reduction.