A Method for Implementing Sub-nanosecond Fast Edge Pulse Signal

This article proposes a method for implementing sub-nanosecond fast edge pulse signals based on gallium nitride transistors combined with gate drivers. Sub-nanosecond fast edge pulse signals are commonly used as trigger signals in modern high-tech equipment. A comparison was made between two common fast edge pulse generation methods based on ultra high speed operational amplifiers and GaN HEMT combined driving. Based on the amplitude design requirements of practical applications, a method was proposed to achieve 5V --1 OV sub-nanosecond fast edge pulse signals through the combination of GaN HEMT and gate drivers. An analysis was conducted on the selection of GaN HEMT and gate drivers, and a simulation model based on the Cadence 16.6 Pspice AD platform was built based on the actual selection results. The influence of parameters such as dead time adjustment resistance, gate drive resistance, and bypass capacitance in the model on the output pulse signal was simulated and analyzed, and the optimal solution for achieving sub-nanosecond fast edge pulse signals of 5V ~ OV was ultimately determined.