Testing of Radiation Hardened Power MOSFET Fabricated at LA Semiconductor

VPT Components successfully completed development of a family of n-channel radiation-hardened MOSFETs at LA Semiconductor, Pocatello, ID. These MOSFETs are radiation hardened to 100 krad(Si) and SEE immune to Xe (15 MeV/n beam) at full rated drain potential. While the radiation data presented here are for the RAD7130 (100V Size 3 die, similar to the 2N7481), these radiation results are applicable to a family of n-channel MOSFETs (NMOS) from 100V to 250V and from Size 1 (∽5mm2) to Size 6 (∽58mm2). TID irradiation was performed at VPT Rad and all test parameters passed TID testing to 100 krad(Si). SEE testing was performed at Texas A&M University (TAMU) using a xenon beam to 1x10⁷ n/cm² and showed very little variation in gate current.