Optimized Driving Conditions for Enhanced Switching Performance with SiC-MOSFETs

Silicon carbide (SiC) based power converters are becoming increasingly popular in power electronics due to their high efficiency and power density, which are critical factors for environmental and energy cost considerations. SiC devices possess higher dielectric breakdown strength, energy bandgap, and thermal conductivity than silicon, allowing for the creation of more efficient and compact power converters. Key parameters such as low RDS(on) and body diode reverse recovery charge play pivotal roles in minimizing losses during operation. These characteristics significantly contribute to the reduction of conduction and switching losses, thereby enhancing overall efficiency. Additionally, SiC devices enable faster switching speeds and higher operating frequencies, resulting in space-saving designs, reduced heat dissipation, and lighter power converters. This paper presents an in-depth investigation into the effects of various drive conditions on the losses and perfor-mance characteristics of onsemi 1200 V SiC MOSFET technology (M3S). By examining parameters such as gate drive voltage, switching frequency, and temperature, this study provides valuable insights for optimizing the switching performance and efficiency of SiC-based power converters. The findings demonstrate how careful adjustment of drive conditions can minimize energy losses, improve thermal management, and extend the operational lifetime of power electronic systems. Consequently, this research con-tributes to the advancement of SiC technology in modern power electronics applications, highlighting its potential to meet the growing demands for sustainable and efficient power conversion solutions.