A Novel Crosstalk Suppression Method for SiC MOSFET Discrete Device With Crosstalk Type Determination

The fast switching speed of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) leads to serious crosstalk problems in half bridge structures. State-of-the-art crosstalk suppression methods have the following limitations: crosstalk caused by common source inductance is ignored; crosstalk is not correctly reflected by external gate source voltage sampling. To overcome above defects, this letter proposes a novel crosstalk suppression method to suppress the crosstalk caused by miller capacitance and common source inductance through automatic switching of loop impedance and drive voltage. In addition, the proposed method can correctly determine the crosstalk type based on the internal gate source voltage detection. Experimental results show that the crosstalk voltage under the proposed method can be reduced by 21.36% and 49.15% during turn-on transient and 27.78% and 76.56% during turn-off transient at 800 V/60 A compared with no crosstalk suppression and with only active miller clamp.