Microwave and Millimeter-Wave GaN and GaAs ICs: High performance from 1 to 100 GHz

This paper presents an overview of microwave and millimeter-wave III-V semiconductor circuits designed by graduate students as a part of their training. The monolithic microwave integrated circuits (MMICs) are designed for a wide range of applications, ranging from an on-chip GaAs Dicke radiometer at 1.4 GHz for non-invasive internal body temperature measurements, to a transmit-receive GaN chip from 75-110 GHz with about 1W of maximum output power and a minimum noise figure of 4.2 dB in transmit and receive mode, respectively. Several other circuits are briefly discussed, e.g. high-efficiency transmitters for high peak-to-average ratio (PAPR) signals and rectifying arrays for wireless power reception.