UV-Induced Degradation Susceptibility of Industrial N-Type Silicon High-Efficiency PV Modules

Modern cell technologies are found to be prone to UV-induced degradation (UVID), impacting their electrical performance, reliability and warranty considerations in the field. This paper presents the findings of Kiwa PVEL's UVID test conducted on industrial modules, including n-type TOPCON, HJT, and p-type PERC sourced from manufacturers worldwide. The modules under short-circuit condition were subjected to front-side UV exposure to a cumulative UV dose (280-400 nm) of 120 kWh/m2 using metal halide lamps in a chamber at 60oC. Each module underwent a comprehensive characterization process involving visual inspection, I-V measurements at STC and low irradiance 200 W/m2, EL imaging at varying current injection levels, and wet leakage current testing. The results reveal varied UVID sensitivity across different cell types and manufacturers, suggesting that degradation is not solely determined by cell architecture, but is significantly influenced by the BOM and manufacturing processes employed. The highest degradation observed in TOPCon, HJT, and PERC modules was -9.7%, -6.7%, and -2.8% respectively.