Investigation of DC & RF/Analog performance of AlGaN/AlN/GaN MOSHEMT for different back barrier

In this work, the authors have presented the effect of different back barriers on DC and analog/RF performances of AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). The different materials like InAIN, InGaN, AIGaN, and AIN have been used as back barriers to study the Figure of Merits (FOMs) like drain current ($\mathbf{I}_{\mathrm{d}}$), transconductance $\left(\mathrm{g}_{\mathrm{m}}\right)$, band bending, threshold voltage $\left(\mathrm{V}_{\mathrm{th}}\right)$, gate leakage current, gate capacitance (Cgg), cut-off frequency ($\mathrm{f}_{\mathrm{T}}$). Adding back barriers joining the GaN channel and buffer layer improves the DC and microwave performance of the MOSHEMT. Sentaurus TCAD simulator is used to carry out simulations. The MOSHEMT device with an AlN back barrier shows highest $I_{d}$ of $0.94 \mathrm{~A} / \mathrm{mm}, \mathrm{g}_{\mathrm{m}}$ of $300.1 \mathrm{mS} / \mathrm{mm}$ and cut-off frequency of $f_{T}$ of $\mathbf{6 7 . 7} \mathbf{G H z}$, which is better for high frequency applications.