Ensuring Reliable Operation of a Semiconductor Transistor When Exposed to High Temperatures

The technology of layered metallization of the reverse side of the crystal is proposed, which allows to obtain improved characteristics of the device, and to obtain reliable contact of the crystal with the crystal holder, with the absence of pores and $100 \%$ solder distribution over the crystal surface. The technical result of the developed technology for obtaining metallization of the reverse side of the crystal is to improve the quality of the fit by obtaining a uniform distribution of the metal layer in a single technological cycle to obtain barrier, adhesive, protective and solder layers with certain thicknesses.