A new 45nm RFSOI Technology Optimized for Low Power, High Performance mmWave Applications

In this paper we introduce a new 45nm technology with a focus on mmWave 5G FEM. The technology features a high resistivity substrate with dual thick Cu for low loss BEOL passives, RVT NFET with fT/fmax ~300/420 GHz and NFmin <0.9 dB at 28 GHz, power amplifier FETs with ft/fmax/Vmax ~150 GHz/350 GHz/1.8X and Switch FET with Ron.Coff ~86 fs. High performance power amplifier (PA), low noise amplifier (LNA) and switch reference circuits are demmostrated. The technology also provides low leakage std cell, I/O and efuse IP.