Low-Threshold Single Ternary GaAsSb Nanowire Lasers Emitting at Silicon Transparent Wavelengths

We demonstrate lasing from single ternary GaAsSb nanowire (NW) lasers with low threshold under optical pumping at silicon transparent wavelengths (~1.1-1.2 µm). These breakthroughs are enabled by combining high-quality, phase-pure GaAsSb NWs with extended cavity lengths and effective surface passivation using lattice-matched InAlGaAs layers. Lasing at thresholds of ~ 3 µJ/cm2 and up to 250 K is verified.