Study of Quantum Dot Solar Cell Including CdTe Quantum Dots Embedded in Al0.3 Ga0.7 As/GaAs Quantum Wells

Intermediate Band Solar Cells were proposed in 1997 as an alternative to tandem solar cells to achieve high efficiency in a photovoltaic device. It has a proposed theoretical limit of $63.2 \%$, much higher than the 33% of a single-junction solar cell. In this study, we explore the photovoltaic performance of CdTe Quantum Dots embedded in $\mathrm{Al}_{0.3} \mathbf{G a}_{0.7} \mathrm{As} / \mathrm{GaAs}$ Quantum Wells for the first time using SCAPS-1D software. This arrangement leads to the formation of intermediate energy levels due to Quantum Confinement, which has been exploited to form a Hole Injection Layer and increase Quantum Efficiency. Further, a detailed study of the device’s band diagram in both illuminated and illuminated cases is provided, offering crucial insights into its performance and working. The best-optimized device yielded a maximum power conversion efficiency of $31.8 \%$, Quantum Efficiency (QE) of $\mathbf{8 0 \%}$ over the visible range, open-circuit voltage $V_{O C}$ of 1.36 and fill factor ($F=$ r) ranging between $\mathbf{7 7 \% - 8 5 \%}$.