Design and Simulation of watt-level Power Amplifier with GaAs pHEMT technology

Using a novel common gate-common source (CGCS) stages current combining technology, a two-stage inductive stacked cascade lumped class-E power amplifier is designed and simulated in this study. This approach increases power added efficiency, achieves a high gain, and high output power than a conventional stacked power amplifier. The low breakdown voltage limit is overcome by using an inductive stacked-FET and cascade arrangement to provide high load power. A prototype in $0.25-\mu \mathrm{m}$ GaAs pHEMT technology is designed and simulated to verify the hypothesis. Power gain, power added efficiency and saturation output power is reported to be $21.98 \mathrm{~dB}, 36.58 \%$, and 33.21 dBm, respectively, at 5 GHz based on simulation results. The transmission (S21) and reflection (S12) coefficients are 16.90 dB and -44.95 dB.