On the Path to High-Temperature Josephson Multi-Junction Devices

We report our progress in the high-temperature superconductor (HTS) Josephson junction fabrication process founded on utilizing a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology. Both the achievable high value of characteristic voltage $V_{c}=I_{c}R_{N}$ of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for low-temperature superconductor (LTS) and HTS circuits even with using a single $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7- x}$ film layer. A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.