A Novel Multi-resonant Current Source Gate Driver Circuit for GaN-HEMT

There are various gate driver circuits available in the literature that can prevent false turn-on, but they usually come in the form of integrated ICs and not in the form of resonant gate driver circuits (RGDC). By using wide bandgap (WBG) semiconductors like gallium nitride high electron mobility transistors (GaN-HEMTs) as a switch in power electronics converters, RGDC circuits have been proven to reduce gate driver losses effectively and are capable of operating at higher frequencies. This study introduces a novel gate driver circuit for GaN-HEMTs, amalgamating elements of both current source gate driver circuits and multi-resonant topologies. The integration aims to reduce losses within the buffer stage. The proposed driver circuit reduces the gate current requirement and prevents the false turn-on phenomenon of GaN-HEMT by providing a negative turn-off-transient voltage without an external negative gate voltage source. Furthermore, this work includes a comparative examination encompassing the proposed driver circuit, current source gate driver circuits, and multi-resonant gate driver circuits.