A 2.4 GHz Fully Integrated Highly Linear Class E Power Amplifier in 28-nm CMOS

In this paper, a fully integrated 2.4 GHz high-linearity class E power amplifier (PA) is proposed based on the TSMC 28 nm CMOS process. By optimizing the topology of the design, balance between linearity and efficiency, as well as reducing power consumption is achieved under the condition of low voltage power supply. The proposed power amplifier adopts the differential topology with two-stage linear power amplifier driving a class E power amplifier. By utilizing the source inductance and series resistance, the stability of the PA is improved. Finally, the proposed PA achieves saturation output power $({P}_{{sat}})$ of 18.53 dBm, gain of 24.52 dB, output 1 dB compression point (OP1dB) of 17.17 dBm, maximum power added efficiency (PAE) of 48.96%, and 37.38% at the OP1dB point. The area of the layout is ${1959}\ \boldsymbol{\mu} {m} \times {726}\ \boldsymbol{\mu} {m}$.