Effect of Doped Barrier on Performance of GaAsSb/InGaAs QW Heterostructure

In this article, we report the effect of p- type doped barrier on the absorption spectra of type-II asymmetric-heterostructure constituted of InGaAs and GaAsSb layers which contains the double quantum wells (DQWs). The effect has been studied on the band alignment, wavefunctions, energy states and finally optical absorption spectra. The absorption spectra have also been compared for the structures having undoped and doped barrier layer of GaAsSb material. It is found that the peak absorption is enhanced significantly in the SWIR region on p-type doping in barrier region with the concentration of 2 ×10¹⁸cm⁻³.