Capacitive Nonlinearity of GFET Compact Model in Quasi-Ballistic Regime for High-Frequency Applications

This study presents an RF performance benchmark for circuit designs using a quasi-ballistic transport model for graphene FET (GFET) devices, which builds on our previous work. Our previous GFETs models explicitly present the capacitive and I-V characteristic nonlinearity of the GFETs models at different channel lengths. The main objective of this study is to evaluate whether the reported model is suitable for use in RF circuit applications. A set of equations developed for this purpose was implemented in Verilog-A using a circuit simulator similar to Cadence Virtuoso. Specifically, we modelled a GFET-based frequency multiplier circuit that takes advantage of graphene’s bipolar conduction.