Implementation of an Efficient Charge Pump using Gate All Around Nanowire TFET for Energy Harvesting Applications

Tunnel field effect transistors (TFET) are becoming popular in various energy harvesting systems. One such area is the design of charge pump. The reverse losses in conventional TFET becomes a barrier when it comes to the performance enhancement of charge pump circuits. Gate all around (GAA) nanowire TFET is considered in this study which is immune to short channel effects. In this paper, the drain current model using Simpson’s rule is presented and it is validated with 2D device simulations. The model is converted to a Verilog-A compact model and it is used for the charge pump circuit simulations. The proposed charge pump with GAA nanowire TFET shows better performance in terms of power conversion efficiency when compared with FinFET and conventional TFET based charge pumps.