Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

This work reviews the development of spin orbit torque (SOT) magnetic random access memory (MRAM) with respect to reliability over the past two decades. It presents an in-depth exploration of the foundational knowledge and physical modeling of SOT devices, detailing the impact of process, voltage, and temperature (PVT) variations alongside challenges in read and write reliability. Moreover, this review further investigates and synthesizes the recent advances in reliability enhancement strategies for SOT-MRAM at the device, manufacturing, circuit, and architectural levels. The overarching aim of this review is to foster further research into the reliability of SOT-MRAM within advanced process nodes, emphasizing its potential utility as a versatile general-purpose memory.