Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs

The parasitic transistor of embedded source field plate of AlGaN/GaN ridge HEMTs (known as gate injection transistors) with abrupt drain current increase by the gate hole injection current have been characterized with our dedicated test structures including the geometries and temperature variations. Accurate simulations with the model can improve fast and high- power circuit design.