Integrated intensity of terahertz photoluminescence of doped GaAs epilayers

This work examines the mechanism for increasing the intensity of terahertz radiative transitions in a structure with an epitaxial GaAs layer doped with donors. Nonequilibrium charge carriers are created as a result of optical pumping by radiation with photon energy exceeding the band gap. A connection has been established between the occurrence of stimulated emission associated with interband electron transitions and the characteristics of the dependence of terahertz radiation intensity on the intensity of optical pumping.