Microwave Schottky Diode Electro-Thermal Model

In this paper, an improved SPICE model for Schottky barrier diodes is developed by analyzing the characteristics of the diodes at different temperatures. The parameters reverse saturation current $(I_0)$, ideality factor $(n)$, and series resistance $(Rs)$ are correlated with temperature to establish an electro-thermal model for Schottky diodes. The proposed model is applied to a simple shunt diode pre-distortion linearizer to verify the model's performance. Under an input power range of −25 dBm to 5 dBm, measurements show that the developed model exhibits higher accuracy in the S21 amplitude curve of the linearizer across different temperatures compared to the model provided by the manufacturer.