Reliability Assessment and Life Time Prediction of FinFET Devices for Future Electronic Applications

FinFET technology is a major leap from the traditional MOSFET and hence can really be a game changer for the electronic devices in terms of high performance and low power operation and the present work is established based experiments and simulations on reliability and life time estimation. Although better in terms of performance, FinFETs are more susceptible for challenges compared to the planar FETs, such as gate oxide breakdown or hot carrier injection, so that special understanding of the basic physics of silicon FinFET devices and preventive circuit techniques should be employed for the long lifetime operation of future circuits. This study reveals vital insights into the failure mechanisms of FinFETs and suggests a way to make sure they work as intended in new electronic systems.