Investigation of Aluminum With Group III Compounded Semiconductor Material in JLTFET

This article presents a junctionless tunnel field-effect-transistor (JLTFET). The limitation of junctionless transistor (JLT) where subthreshold slope (SS) restricted to 60 mV/dec are encountered using band-to-band tunneling mechanism. The electrical properties of conventional JLTFET are enhanced by incorporating compound semiconductors. In this work, the impact of compound semiconductor material by mixing aluminum (group III) material with group V material are analyzed. To determine the electrical behavior and performing its performance comparison AlAs, AlP, AlSb, and AlN has been considered as the body material in JLTFET device. The comparison has been done by considering several-figures-of-merits such as bandgap fluctuations, potential distribution, electron concentration, electric field drop, followed by its impact on transfer characteristic of the device.