Study of Silicide Blocking for GGNMOS Performance and Turn-On Time in CMOS Process

In order to minimize the occurrence of ESD damage in integrated circuits, it is crucial to design protective circuits that can effectively prevent ESD destruction. One approach that has been widely adopted is the utilization of NMOS-based ESD protection circuits. Among the various NMOS-based ESD protection circuits, the gate-grounded NMOS (GGNMOS) has emerged as a prominent choice. This study focuses on utilizing the GGNMOS as a benchmark for ESD protection to enhance its performance.