Development of a double pulse test plataform for switching loss investigation in emerging SiC MOSFET technology

The emerging technology of silicon carbide (SiC) MOSFETs has been gaining prominence in power electronics due to its superior performance compared to traditional Silicon (Si) technology. This technology stands out for operating at higher switching frequencies, which is beneficial for improving the power density of the converter by reducing weight or size. However, switching losses can become significant with the increase in switching frequency. In this work, we developed a Double Pulse Test (DPT) platform, enabling the evaluation of SiC MOSFET switching losses, providing essential insights for optimizing design and ensuring a better efficiency. The results obtained in conjunction with LTSpice simulation, demonstrate the challenges of performing DPT in characterizing SiC MOSFETs switching losses.