Performance Analysis of Digital IC Units Based on Emode GaN HEMTs

GaN-based digital integrated circuit units are designed using only E-Mode HEMT devices. Direct-coupled FET (DCFL) logic gates such as Inverter, AND, OR, XOR, and so on, are designed and used as the basis for the construction of a basic arithmetic adder circuit. They are characterized up to $300^{\circ} \mathrm{C}$. The device is shown to have a large input voltage swing, fast operating speed, and high temperature stability. These digital integrated circuits can operate at least at $300^{\circ} \mathrm{C}$, which shows the great potential of GaN HEMTs in the field of power ICs.