EFT Immunity Test and Damage Localization of C-Band Limiters

In this paper, the EFT immunity experimental platform of the C-band RF limiter is designed, and then the electromagnetic immunity test and device damage analysis are carried out. When the voltage of the EFT interference source exceeds 900V, the device experiences increased insertion loss. When the interference continues to grow to 1000V, the device is damaged. Failure localization is performed for the failed sample by using electromagnetic emission measurement techniques. By analyzing the emitted electromagnetic field map (EMF), we can conclude that the PIN diodes are more susceptible to damage. The device's performance is improved by disassembling it and replacing the PIN diode, proving that we have accurately located the fault point.