The Impact of Bonding Wire Failure in Microelectronic Package on Near-Field Radiation

Bonding wires are extensively used in microelectronic package, providing electrical and mechanical interconnections. However, the bonding wire failure is one of the main failure modes during chip operation, which will result in radiation leakage. Accordingly, in this current work, the impact of bonding wire failure on near-field radiation is investigated by theoretical modeling and experimental testing. A 3-D electromagnetic field model of a signal transmission channel with failed bonding wires is developed to analyze the near-field electric radiation intensity and near-field magnetic radiation intensity. A series of experimental tests are conducted to validate the electromagnetic field model. The transfer functions of near-field test systems are also discussed and calculated to compare the simulated near-field radiation intensities and measured voltages. In addition, various topologies of the bonding wires on near-field radiation were also analyzed and discussed in this work, including the configuration of the bonding wire areas, the size of the bonding wire area, and the number of the bonding wires in each area. The results of this study provide a better understanding of the effect of bonding wire failure on near-field radiation and theoretical support for improving the electromagnetic compatibility in the electronic system.