Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors

This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage ( ${V}_{\text {TH}}\text {)}$ is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency ( ${f}_{\text {c}}~\approx ~480$ Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z $\approx ~1.5$ nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.