Plated wire memory with flexible Ferrite keeper

A plated wire memory having high bit density (word spacing of 1.0 mm) and operating at low drive current (I_{w} = 270mA,I_{D} = 30mA) is obtained by embedding the plane in the flexible ferrite keeper (\mu \simeq 6), a mixture of nickel-zinc ferrite powder and an organic binder. Back voltage (9 volts) of word lines, delay time (8 ns), and crosstalk of digit sense lines are measured on a stack having 512 word lines by 144 digit sense lines. Due to the low drive current and high packing density, these values are almost the same as those of the stack without the keeper. The present memory stack with the keeper seems to be suitable for operation by integrated peripheral circuits.