A Reading Method for 2T2R RRAM Arrays Coding their Multiple States

Resistive random-access memory (RRAM) devices have been frequently mentioned considering their robust performances. The conventional transistor one-memristor (1TIR) RRAM device becomes less competitive considering its multi- level operation. This paper introduces a two-transistor two- memristor (2T2 $R$) structure as well as a reading method for the configuration. The designed sense circuit based on a Strong-Arm latch codes 9 different states with 6 bits in 48ns and consumes a power of 7.6uW and it also demonstrates a tolerance to RRAM technologies and variations.