Next Generation Power Module with Parallel Connected SiC MOSFETs for BEV Traction Inverters

We show a simple technique for suppression of self-excited oscillation in parallel connected multiple Silicon Carbide (SiC) MOSFETs. Here, we focus on the source-to-source inductance in adjacent chips (L(ss)) which is considered one of the most critical parameters stabilizing the power devices connected in parallel. By introducing copper clips and optimizing layout, Lss is completely well controlled. As a result, a strong dependency of oscillation behavior to L(ss) value is observed. In addition, a highly efficient switching operation and marked power cycling durability is demonstrated by our newly developed SiC power module, mainly target to traction inverter, “TRCDRIVE pack (TM). Note that “TRCDRIVE pack (TM) is a trademark or a registered trademark of ROHM Co., Ltd.. This study gives an important knowledge to draw SiC potential at the maximum and to design next generation SiC-based battery electric vehicle traction inverters.