Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range

In this paper, the viability of the M-Shunt concept for high power levels is presented. The M-Shunt concept is based on a temperature compensated resistive sheet of Manganin (TM) (MgCuNi), arranged in a multilayer planar setup for best electrical performance regarding current capability, bandwidth, and accuracy. Measurements demonstrate that the M-Shunt is ideally suited for the characterisation of fast current transients of modern power switches and to capture current pulses in the kiloampere range. The presented M-Shunts are directly screwed onto the contacts of the IGBT modules or soldered in the busbar connections, while the current transients are recorded during double-pulse tests. Preliminary tests with the M-Shunt concept performed in an electromagnetic forming machine have demonstrated, that the M-Shunt concept can measure even much higher current levels without destruction. The M-Shunt concept is confirmed as a priori choice when high bandwidth and high energy are required in conjunction.