Improving the Performance of Nanoscale Vacuum Channel Transistors via Composite Gate

Nanoscale Vacuum Channel Transistors (NVCT) are positioned to revolutionize the field of electronic devices in the future. However, the elevated operational voltage of planar side gate NVCTs continues to constrain device performance and stability. Overcoming this limitation and enhancing stability through structural design modifications remain formidable challenges. In this study, we propose a composite gate structure that effectively lowers the device's operating voltage and improves its stability. Utilizing composite gate operation markedly reduces the device's operational voltage compared to side gate operation, while concurrently achieving higher anode currents at lower operational voltages $(I_{a}=8.93\text{nA}, V_{g}=18\mathrm{V},V_{a}=35\mathrm{V})$. Consequently, these transistors hold promise for a wide array of integrated circuit applications, mitigating the issue of high operating voltages and emerging as a crucial solution in the realm of future electronic devices.