Performance of Graphene Hall Devices Under Different Device Structures

This study investigates the influence of different device structures, specifically, the effect of vertical spatial relationship between graphene nanosheets and electrodes on the performance of graphene Hall devices. The results show that placing graphene nanosheets beneath the electrodes can enhance the devices' normalized current sensitivity, while placing graphene nanosheet on top of the electrode improves the normalized voltage sensitivity, emphasizing the importance of device structure for achieving high-sensitivity Hall devices. Overall, the research offers valuable guidance for optimizing device design and manufacturing to achieve better functionality and reliability.