Advanced Packaging Technology of GaN HEMTs Module for High-power and High-frequency Applications: A Review

The GaN HEMT devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging to package GaN HEMTs power module with both low parasitic inductance and thermal resistance, because the lateral GaN HEMTs devices have fast switching speed, high heat-flux density and small die size. This paper made a comprehensive review on the state-of-the-art packaging technologies of GaN HEMTs power modules based on different substrate integration structures, including PCB surface mounting, wire-bonded flip-chip, PCB-embedded, ceramic-substrate integrated, IMS integrated, and hybrid PCB-on-DBC packaging. Each technology has a trade-off among parasitic inductance, thermal performance, and manufacturability. Innovations are still necessary for packaging GaN HEMT modules for their applications in high-frequency and high-power-density converters.1.