First Demonstration of BEOL-Compatible 3D Vertical FeNOR

In this work, we present and experimentally demonstrate the world's first back-end-of-line (BEOL) compatible vertical ferroelectric NOR (FeNOR) memory. The key highlights of this work are outlined below: (1) Side-fin structure has been meticulously designed and realized to enhance the ferroelectric switching and to suppress the cell-to-cell interference. (2) Outstanding I
on
/+Ioff ratio (> 10
⁶
) and memory window (~4 V) has been achieved, surpassing the performance of other reported 3D FeFETs. (3) Leveraging the advantages of ferroelectric switching, low programming voltage, rapid programming speed, and good endurance have been achieved. The realization of our 3D FeNOR presents a compelling alternative for applications requiring low power consumption and high-speed operation.