Analysis of the cryogenic continuous film memory

It is shown that the experimental switching behavior of CFM cells with orthogonal drive lines can be quantitatively explained by a three-parameter persistatron-type model. This model is used to calculate the various cell operating limits and to prove that cell drive current operating range can never exceed\pm1/7of the optimum value. Maximizing this range is found to require operation in a mode in which some degree of information degradation by disturb currents occurs. The CFM cell disturb characteristics are shown to favor word-organized over bit-organized operation.