Design of a high blocking voltage RC-IGBT with suppressed Snapback

Compared to the fourth generation of field-stop trench IGBT, the Reverse Conducting IGBT (RC-IGBT) has the advantages of low cost, small size and high reliability, but its popularization is limited by the semiconductor process and the inherent snapback. The market mainstream RC-IGBT is 650 V 1200 V medium and low voltage flat type. In this paper, a high blocking voltage trench field-stop RC-IGBT with suppressed Snapback is designed through process simulation, and the corresponding process parameters is studied. The influence of the process parameters on the static characteristics of the device, such as conducting characteristics, transfer characteristics, blocking characteristics reverse conducting characteristics and are analyzed. The optimized process parameters are proposed.