Design and Implementation of a novel high failure current shunt MLSCR

The failure current (I
t2
) in electrostatic discharge (ESD) protection device design indicates its protective capabilities. The higher the failure current, the greater the anti-static capability. Using the modified lateral silicon-controlled rectifier (MLSCR) framework as a basis, a novel structure known as the shunt modified lateral silicon-controlled rectifier (SMLSCR) was designed. The working principle of this device was verified through device simulation, and the electrical performance of this device was tested through a transmission line pulse (TLP) system. According to the test findings, the holding voltage of SMLSCR essentially stays the same under the same area as MLSCR, and the failure current rises by 12%, from 11.15 A to 12.51 A. Therefore, the introduction of an external shunt branch in MLSCR can effectively improve the robustness of the device