Budget Analysis of Multiple Parameters in EUV Lithography System Based on Support Vector Machine

As one of the most critical pattern transfer technologies in semiconductor manufacturing, lithography directly affects the performance of devices or circuits. With the development of technology node, the critical dimensions of patterns are continually shrinking, which places increasingly high demands on lithography. In order to explore the influence of various parameters of scanners on the lithography results, and to provide quantitative and precise direction for the development of extreme ultraviolet (EUV) scanners, this paper proposes a methodology of budget analysis of multiple parameters based on support vector machine (SVM). First, establish a SVM classification model between parameters in lithography system and lithography results. Then, identify the parameter combinations that meet the lithography requirements according to the SVM model. Finally, calculate basic budget range for each parameter according to the statistics on the general distribution of each parameter, as well as the strict budget range according to the joint distribution between parameters. For patterns that commonly used in EUV single exposure at the 5nm technology node, we obtained the budget ranges for 8 parameters simultaneously, where the parameters come from the light source, illumination system, and projection system. Compared to the basic range of each parameter, the strict budget range of flare and dose has been reduced by more than 50 %, which provides clearer goals for the development of each subsystem in EUV scanners. Since the proposed method considers the coupling effects of multiple parameters simultaneously, the results are more reliable compared to those considering the effects of every single parameter only. Furthermore, since the operations of SVM modeling and budget analysis of this method are simple and easily extendable to more parameters, this method can serve as an effective alternative for budget analysis of parameters in future research and development of EUV scanners.