Design Comparing of X-band Driver Amplifier with Active Biasing

This work goal is an investigation the results of developing a driver amplifier for the X -band with an active bias. The purpose of the work is to compare the results of modeling a monolithic integrated circuit using CAD and measurement data on a chip produced by the manufacturer. For this purpose, the parameters were modeled and measurements were carried out using available measuring instruments. A distinctive feature of the device is the bias method, which allows the transistor to be biased using the supply voltage, the so-called autobias. Dependences was measured by using scalar and vector network analyzer. The measurement results were obtained after all SOLT measurements were completed..The device was developed for use in the frequency range from 8 to 10 GHz which is consisted in X-band. The main parameters of the developed amplifier were modeled using models of pseudomorphic field-effect transistors based $0.25 \mu \mathrm{m}$, GaAs, pHEMT technology.