Magnetic induction transducers based on silicon planar transistors

The paper presents the results of studies and development of silicon planar transducers of constant and variable magnetic field induction into an electric signal. The transistors have magneto-sensitive area within the volumes of 10^-5-10^-3mm³. The dependences of transport coefficient on electric field intensity in the base area as well as current and voltage magneto-sensitivity are given. They are 250 μA.T^-1(Ie=5mA) and 50 V.T^-1for the transducers of tangential component of induction and 30 μA.T^-1(Ie=5mA) and 30 V.T^-1for the transducers of normal component induction.