Characterization of CdTe thin film solar cells

Experimental results are presented for two types of solar cells produced from electrodeposited CdTe thin films, namely n-i-p CdS/CdTe/ZnTe and np CdS/CdTe structures. Properties of the n-i-p structure are highlighted and it is shown that the distribution of the electric field in the entire CdTe layer is crucial for producing high conversion efficiency solar cells. The properties of n-p and n-i-p devices of 0.08 cm/sup 2/ area are compared and typical light I-V data are reported. Although neither device was fully optimized, the advantages of the n-i-p structure is reflected in increased short circuit current density, fill factor and as a reduced series resistance. The variation of the acceptor density (N/sub A/) with distance in the CdTe layer is shown for both devices. The zero bias depletion widths are 1.3 mu m for the n-p and 1.58 mu m for the n-i-p devices. The external quantum efficiency versus wavelength for the two devices is given; for light incident from the CdS side, the n-i-p device has a higher long wavelength response. Carriers generated deep in the CdTe are collected efficiently as the electric field extends throughout the i layer. Recombination in the field-free region of the n-p device is responsible for the losses. For short wavelength light, which is absorbed close to the CdTe surface, collection is limited due to diffusion and recombination. In the n-i-p device, however, these carriers are also collected by the drift field.<>